APTML100U60R020T1AG APTML100U60R020T1AG C rev 2 october, 2012 www.microsemi.com 1 C 4 pins 1/2 ; 5/6 must be shorted together absolute maximum ratings ? in saturation mode these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 1000 v t c = 25c 20 i d continuous drain current t c = 80c 14 i dm pulsed drain current 74 a v gs gate - source voltage 30 v r dson drain - source on resistance 720 m ? p d maximum power dissipation ? t c = 25c 520 w application ? electronic load dedicated to power supplies and battery discharge testing features ? linear mosfet ? very low stray inductance ? internal thermistor for temperature monitoring ? high level of integration ? aln substrate for improved thermal performance benefits ? direct mounting to heatsink (isolated package) ? easy series and parallels combinations for power and voltage improvements ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant linear mosfet power module v dss = 1000v r dson = 600m ? typ @ tj = 25c i d = 20a @ tc = 25c downloaded from: http:///
APTML100U60R020T1AG APTML100U60R020T1AG C rev 2 october, 2012 www.microsemi.com 2 C 4 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v ds = 1000v ; v gs = 0v t j = 25c 250 i dss zero gate voltage drain current v ds = 800v ; v gs = 0v t j = 125c 1000 a r ds(on) drain C source on resistance v gs = 10v, i d = 10a 600 720 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 2 4 v i gss gate C source leakage current v gs = 30 v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 6000 c oss output capacitance 775 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 285 pf shunt electrical characteristics symbol characteristic min typ max unit r sh resistance value 20 m ? t sh tolerance 2 % t c =25c 20 p sh load capacity t c =80c 10 w t c =25c 31 i sh current capacity t c =80c 22 a temperature sensor ptc symbol characteristic min typ max unit r 25 resistance @ 25c 1980 2020 ? r 100 /r 25 resistance ratio tamb=100c & 25c 1.676 1.696 1.716 r -55 /r 25 resistance ratio tamb=-55c & 25c 0.48 0.49 0.50 b temperature coefficient 7900 ppm/k thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance mosfet 0.24 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 80 g downloaded from: http:///
APTML100U60R020T1AG APTML100U60R020T1AG C rev 2 october, 2012 www.microsemi.com 3 C 4 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com downloaded from: http:///
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